SKW30N60HS Datasheet, PDF (4/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

SKW30N60HS
^
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Symbol
Conditions
min.
t_d(on)
T_j=150°C
-
t_r
t_d(off)
V_CC=400V,I_C=30A,
V_GE=0/15V,
R_G= 1.8Ω
-
-
t_f
L_σ¹⁾ =60nH,
-
E_on
C_σ¹⁾ =40pF
Energy losses include
-
E_off
“tail” and diode
-
E_ts
reverse recovery.
-
t_d(on)
T_j=150°C
-
t_r
t_d(off)
V_CC=400V,I_C=30A,
V_GE=0/15V,
R_G= 11Ω
-
-
t_f
L_σ¹⁾ =60nH,
-
E_on
C_σ¹⁾ =40pF
Energy losses include
-
E_off
“tail” and diode
-
E_ts
reverse recovery.
-
Value
typ.
16
13
122
29
0.78
0.48
1.26
20
19
274
27
0.91
0.70
1.61
Unit
max.
ns
mJ
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t_rr
T_j=150°C
-
190
t_S
V_R=400V, I_F=30A,
-
30
t_F
di_F/dt=1250A/µs
-
160
Diode reverse recovery charge
Q_rr
-
2.0
Diode peak reverse recovery current I_{rr m}
-
24
Diode peak rate of fall of reverse
recovery current during t_b
di_rr/dt
-
480
ns
µC
A
A/µs
1) _{Leakage inductance L σ an d Stray capacity Cσ due to test circuit in Figure E.}
Power Semiconductors
4
Rev. 2 Aug-02