SKW30N60HS Datasheet, PDF (10/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

SKW30N60HS
^
500ns
I_F=60A
450ns
400ns ^IF=30A
350ns
300ns _IF=15A
250ns
200ns
150ns
100ns
0A/µs 250A/µs 500A/µs 750A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(V_R=400V, T_J=150°C,
Dynamic test circuit in Figure E)
2,8µC
2,6µC
2,4µC
2,2µC
I_F=60A
2,0µC
1,8µC
I_F=30A
1,6µC
1,4µC
1,2µC ^IF=15A
1,0µC
0A/µs 250A/µs 500A/µs 750A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current
slope
(V_R=400V, T_J=150°C,
Dynamic test circuit in Figure E)
I_F=30A I_F=60A
24A
20A
16A
I_F=15A
12A
8A
4A
0A
200A/µs 400A/µs 600A/µs 800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current
slope
(V_R=400V, T_J=150°C,
Dynamic test circuit in Figure E)
-400A/µs
-300A/µs
-200A/µs
-100A/µs
-0A/µs
200A/µs 400A/µs 600A/µs 800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V_R=400V, T_J=150°C,
Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2 Aug-02