SKW30N60HS Datasheet, PDF (11/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

SKW30N60HS
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T_J=-55°C
25°C
50A
150°C
40A
30A
20A
10A
0A
0,0V
0,5V
1,0V
1,5V
2,0V
V_F, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
I_F=60A
2,0
I_F=30A
1,5
I_F=15A
1,0
0,5
0,0
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as a
function of junction temperature
10⁰K/W _D=0.5
0.2
0.1
10^-1K/W _0.05
1 0 ^-2 K /W
0.02
0.01
R,(K/W)
0.358
0.367
0.329
0.216
0.024
τ, (s)=
9.02*10^-2
9.42*10^-3
9.93*10^-4
1.19*10^-4
1.92*10^-5
R1
R2
single pulse
C1=τ1/R1 C2=τ2/R2
1 0 ^-3 K /W
1µs 10µs 100µs 1ms 10ms 100ms
t_P, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse
width
(D=t_P/T)
Power Semiconductors
11
Rev. 2 Aug-02