SKW30N60HS Datasheet, PDF (3/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

SKW30N60HS
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Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
C_iss
C_oss
C_rss
V_CE=25V,
V_GE=0V,
f=1MHz
-
1500
pF
-
203
-
92
Gate charge
Q_Gate
V_CC=480V, I_C=30A
-
141
nC
V_GE=15V
Internal emitter inductance
L_E
measured 5mm (0.197 in.) from case
TO-247AC
-
13
nH
Short circuit collector current¹⁾
I_C(SC)
V_GE=15V,t_SC≤10µs
-
220
A
V_CC ≤ 600V,
T_j ≤ 150°C
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Symbol
Conditions
min.
t_d(on)
T_j=25°C,
-
t_r
t_d(off)
V_CC=400V,I_C=30A,
V_GE=0/15V,
R_G=11Ω
-
-
t_f
L_σ²⁾ =60nH,
-
E_on
C_σ²⁾ =40pF
Energy losses include
-
E_off
“tail” and diode
-
E_ts
reverse recovery.
-
Value
typ.
20
21
250
25
0.60
0.55
1.15
Unit
max.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t_rr
T_j=25°C,
-
t_S
V_R=400V, I_F=30A,
-
t_F
di_F/dt=1100A/µs
-
Diode reverse recovery charge
Q_rr
-
Diode peak reverse recovery current I_{rr m}
-
Diode peak rate of fall of reverse
di_rr/dt
-
recovery current during t_b
125
20
105
0.82
17
580
ns
µC
A
A/µs
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
2) _{Leakage inductance L σ an d Stray capacity Cσ due to test circuit in Figure E.}
Power Semiconductors
3
Rev. 2 Aug-02