SKW30N60HS Datasheet, PDF (5/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

SKW30N60HS
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100A
80A
T_C=80°C
60A
T_C=110°C
40A
I_c
20A
I_c
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T_j ≤ 150°C, D = 0.5, V_CE = 400V,
V_GE = 0/+15V, R_G = 11Ω)
100A
10A
1A
t_P=4µs
15µs
50µs
200µs
1ms
DC
0,1A
1V
10V
100V
1000V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T_C = 25°C, T_j ≤ 150°C;
V_GE=15V)
200W
150W
100W
Limited by Bond wire
40A
30A
20A
50W
10A
0W
25°C
50°C
75°C 100°C 125°C
Figure 3.
T_C, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(T_j ≤ 150°C)
0A
25°C
Figure 4.
75°C
125°C
T_C, CASE TEMPERATURE
Collector current as a function of
case temperature
(V_GE ≤ 15V, T_j ≤ 150°C)
Power Semiconductors
5
Rev. 2 Aug-02