SKW30N60HS Datasheet, PDF (2/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

SKW30N60HS
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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
R_thJC
R_thJCD
R_thJA
Conditions
TO-247AC
Max. Value
Unit
0.5
K/W
1.29
40
Electrical Characteristic, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V_(BR)CES
V_CE(sat)
V_F
V_GE(th)
I_CES
I_GES
g_fs
V_GE=0V, I_C=500µA
V_GE = 15V, I_C=30A
T_j=25°C
T_j=150°C
V_GE=0V, I_F=30A
T_j=25°C
T_j=150°C
I_C=700µA,V_CE=V_GE
V_CE=600V,V_GE=0V
T_j=25°C
T_j=150°C
V_CE=0V,V_GE=20V
V_CE=20V, I_C=30A
min.
600
-
3
-
-
-
-
Value
Typ.
-
2.8
3.5
1.55
1.55
4
-
-
-
20
Unit
max.
-V
3.15
4.00
2.05
2.05
5
µA
40
3000
100 nA
S
Power Semiconductors
2
Rev. 2 Aug-02