SKW30N60HS Datasheet, PDF (8/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

SKW30N60HS
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5,0mJ
4,0mJ
*) E_on and E_ts include losses
due to diode recovery
3,0mJ
E_on*
2,0mJ
1,0mJ
E_off
0,0mJ
0A
10A 20A 30A 40A 50A 60A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, R_G=11Ω,
Dynamic test circuit in Figure E)
3,0 mJ
*) Eon and Ets include losses
due to diode recovery
2,5 mJ
2,0 mJ
1,5 mJ _Ets*
1,0 mJ _Eon*
0,5 mJ
E_off
0,0 mJ
0Ω
5Ω 10Ω 15Ω 20Ω 25Ω 30Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, I_C=30A,
Dynamic test circuit in Figure E)
*) E_on and E_ts include losses
due to diode recovery
1,5mJ
E_ts*
1,0mJ
E_on*
E_off
0,5mJ
0,0mJ
0°C
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE=400V,
V_GE=0/15V, I_C=30A, R_G=11Ω,
Dynamic test circuit in Figure E)
D=0.5
10^-1K/W ^0.2
0.1
0.05
10^-2K/W ^0.02
0.01
10^-3K/W
R,(K/W)
0.39
0.403
0.2972
0.1098
R1
τ, (s)
0.0981
1.71*10^-2
1.04*10^-3
1.37*10^-4
R2
single pulse
10^-4K/W
1µs
10µs 100µs
C1=τ1/R1 C2=τ2/R2
1ms 10ms 100ms
t_P, PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(D = t_p / T)
Power Semiconductors
8
Rev. 2 Aug-02