IKW30N65WR5_15 Datasheet, PDF (9/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

1000
td(off)
tf
td(on)
tr
100
10
ReverseConductingSeries
IKW30N65WR5
1000
td(off)
tf
td(on)
tr
100
10
1
10 20 30 40 50 60 70 80
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15/V,IC=30A,dynamictestcircuitin
Figure E)
1
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=30A,RG(on)=26Ω,RG(off)=26Ω,dynamic
test circuit in Figure E)
6.0
typ.
5.5
min.
max.
5.0
4.5
3.5
Eoff
Eon
Ets
3.0
2.5
4.0
2.0
3.5
1.5
3.0
2.5
1.0
2.0
0.5
1.5
1.0
25
50
75
100
125
150
Tvj,JUNCTIONTEMPERATURE[°C]
0.0
0
10
20
30
40
50
60
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature
functionofcollectorcurrent
(IC=0.3mA)
(inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,RG(on)=26Ω,RG(off)=26Ω,
dynamic test circuit in Figure E)
9
Rev.1.3,2015-06-01