IKW30N65WR5_15 Datasheet, PDF (10/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

ReverseConductingSeries
IKW30N65WR5
3.0
Eoff
Eon
Ets
2.5
2.0
2.00
Eoff
Eon
1.75
Ets
1.50
1.25
1.5
1.00
0.75
1.0
0.50
0.5
0.25
0.0
10 20 30 40 50 60 70 80
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,IC=30A,dynamictestcircuitin
Figure E)
0.00
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=30A,RG(on)=26Ω,RG(off)=26Ω,dynamic
test circuit in Figure E)
20
VCC=130V
18
VCC=520V
1E+4
16
Cies
Coes
14
Cres
1000
12
10
8
100
6
4
2
0
0
25
50
75
100 125 150
QGE,GATECHARGE[nC]
10
0 3 6 9 12 15 18 21 24 27 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalgatecharge
(IC=30A)
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
10
Rev.1.3,2015-06-01