IKW30N65WR5_15 Datasheet, PDF (8/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

ReverseConductingSeries
IKW30N65WR5
90
VGE = 20V
80
17V
15V
70
13V
60
11V
9V
50
8V
40
7V
6V
30
5V
20
90
Tvj=25°C
Tvj=175°C
80
70
60
50
40
30
20
10
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
2
3
4
5
6
7
8
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.00
1.75
1.50
1.25
IC = 7A
IC = 15A
IC = 30A
1000
100
td(off)
tf
td(on)
tr
1.00
0.75
10
0.50
0.25
0.00
25
50
75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
1
0
10
20
30
40
50
60
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,RG(on)=26Ω,RG(off)=26Ω,dynamic
test circuit in Figure E)
8
Rev.1.3,2015-06-01