IKW30N65WR5_15 Datasheet, PDF (12/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

ReverseConductingSeries
IKW30N65WR5
50
Tvj=25°C,IF=15A
45
Tvj=175°C,IF=15A
0
-500
Tvj=25°C,IF=15A
Tvj=175°C,IF=15A
40
-1000
35
-1500
30
-2000
25
-2500
20
-3000
15
-3500
10
-4000
5
-4500
0
500 750 1000 1250 1500 1750 2000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
-5000
500 750 1000 1250 1500 1750 2000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 22. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
90
Tvj=25°C
Tvj=175°C
80
70
60
50
40
30
20
10
2.50
2.25
IF=7A
IF=15A
IF=30A
2.00
1.75
1.50
1.25
1.00
0.75
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF,FORWARDVOLTAGE[V]
Figure 23. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
0.50
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 24. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
12
Rev.1.3,2015-06-01