IKW30N65WR5_15 Datasheet, PDF (6/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

ReverseConductingSeries
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=900A/µs
IKW30N65WR5
-
95
- ns
- 1.25 - µC
- 22.0 - A
- -590 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=26.0Ω,RG(off)=26.0Ω,
Lσ=45nH,Cσ=32pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
35
- ns
-
14
- ns
- 423 - ns
-
6
- ns
- 1.09 - mJ
- 0.46 - mJ
- 1.55 - mJ
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=15.0A,
diF/dt=900A/µs
- 121 - ns
- 2.15 - µC
- 28.0 - A
- -1100 - A/µs
6
Rev.1.3,2015-06-01