IKW30N65WR5_15 Datasheet, PDF (7/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

ReverseConductingSeries
IKW30N65WR5
100
200
180
160
not for linear use
140
10
120
100
80
1
60
40
20
0.1
1
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs)
0
25
50
75
100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
70
90
VGE=20V
80
15V
60
13V
70
11V
50
60
9V
8V
40
50
7V
30
40
6V
30
20
20
10
10
0
25
50
75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
7
Rev.1.3,2015-06-01