IKW30N65WR5_15 Datasheet, PDF (11/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

ReverseConductingSeries
IKW30N65WR5
1
D = 0.5
0.2
1
D = 0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.1
0.01
single pulse
0.01
single pulse
0.1
0.01
1E-6
i:
1
2
3
4
5
ri[K/W]: 1.2E-3 0.026208 0.325117 0.273429 0.185068
τi[s]: 5.0E-7 1.7E-5 1.1E-4 7.0E-4 4.5E-3
1E-5
1E-4
0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)
0.01
1E-6
i:
1
2
3
4
5
ri[K/W]: 1.8E-3 0.265343 0.526929 2.350517 0.280098
τi[s]: 6.0E-7 6.3E-5 4.5E-4 4.8E-3 0.02441
1E-5
1E-4 0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 18. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
200
Tvj=25°C,IF=15A
Tvj=175°C,IF=15A
175
3.0
Tvj=25°C,IF=15A
Tvj=175°C,IF=15A
2.5
150
2.0
125
1.5
100
1.0
75
0.5
50
500 750 1000 1250 1500 1750 2000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
0.0
500 750 1000 1250 1500 1750 2000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
11
Rev.1.3,2015-06-01