IKW30N65WR5_15 Datasheet, PDF (5/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

ReverseConductingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
IGES
Transconductance
gfs
Integrated gate resistor
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=15.0A
Tvj=25°C
Tvj=175°C
IC=0.30mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
IKW30N65WR5
Value
Unit
min. typ. max.
650 -
-V
- 1.40 1.80 V
- 1.65 -
- 1.40 1.90 V
- 1.50 -
3.2 4.0 4.8 V
-
- 40.0 µA
-
-
-
-
- 100 nA
- 35.0 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes
VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=30.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 3700 -
-
35
- pF
-
16
-
- 155.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=26.0Ω,RG(off)=26.0Ω,
Lσ=45nH,Cσ=32pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
39
- ns
-
12
- ns
- 367 - ns
-
9
- ns
- 0.99 - mJ
- 0.33 - mJ
- 1.32 - mJ
5
Rev.1.3,2015-06-01