IKW30N65WR5_15 Datasheet, PDF (2/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

ReverseConductingSeries
ReverseconductingIGBTwithmonolithicbodydiode

Features:
•PowerfulmonolithicdiodeoptimizedforZCSapplications
•TRENCHSTOP^TM5technologyapplicationsoffers:
-highruggedness,temperaturestablebehavior
-verylowVCEsatandlowEoff
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•Lowelectricalparametersdepending(dependence)on
temperature
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Welding
•PFC
•ZCS-converters
IKW30N65WR5
C
G
E
G
C
E
KeyPerformanceandPackageParameters
Type
VCE
IC
VCEsat,Tvj=25°C
IKW30N65WR5
650V 30A
1.4V
Tvjmax
175°C
Marking
K30EWR5
Package
PG-TO247-3
2
Rev.1.3,2015-06-01