IKW30N65WR5_15 Datasheet, PDF (4/15 Pages) Infineon Technologies AG – Reverse conducting IGBT with monolithic body diode

IKW30N65WR5
ReverseConductingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=117°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Gate-emitter voltage
PowerdissipationTC=25°C
PowerdissipationTC=117°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tvj
Tstg
Value
Unit
650
V
60.0
A
30.0
90.0
A
90.0
A
24.0
A
15.0
45.0
A
±20
V
185.0
75.0
W
-40...+175
°C
-55...+150
°C
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.81
K/W
3.40
K/W
40
K/W
4
Rev.1.3,2015-06-01