PTFB193404F_16 Datasheet, PDF (8/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

PTFB193404F
Reference Circuit
R803
10 Ohm
C804
10000000 pF
R801
100 Ohm
S1
2
1
3
C802
10000000 pF
S3
87
1
6
R802
1300 Ohm
2
5
34
C2
R804
1200 Ohm
S2
4
S
1
B
E 3 _C801
1000000 pF
C803
1000 pF
TL102
TL101 2
3
1
TL117
TL116
TL122 ²
1
3
TL118
C102
1000000 pF
TL119
L101
22 nH
TL103
4
C104
10000000 pF
C107
1.5 pF
RF^P1_^OI^RN^T
TL110
TL121
3
1
2
TL120
TL109
TL108
C103
10000000 pF
TL123 TL124
3
TL111
1
2
C101
1000000 pF TL112
L102
22 nH TL113
R103
10 Ohm
C106
18 pF
C105
18 pF
R104
10 Ohm
TL104
TL107
TL106
TL114
εr = 3.48
H = 20 mil
RO/RO4350 B1
TL105
Gate DUT
(Pin G1)
TL115 _{Gate DUT}
(Pin G2)
Reference circuit input schematic for ƒ = 1990 MHz
Data Sheet
8 of 14
Rev. 05.2, 2016-06-14