PTFB193404F_16 Datasheet, PDF (6/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

PTFB193404F
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal,
PAR = 7.5 dB, BW = 3.84 MHz
26
50
Gain
22
30
18
10
Efficiency
14
-10
10
PARC @ .01% CCDF
-30
6
-50
ACP
2
-70
36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1960 MHz,
3GPP WCDMA signal,
PAR = 7.5 dB, BW = 3.84 MHz
26
50
Gain
22
30
18
10
14
Efficiency
-10
PARC @ .01% CCDF
10
-30
6
2
36
ACP
38 40 42 44 46 48 50 52
Average Output Power (dBm)
-50
-70
54
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1930 MHz,
3GPP WCDMA signal,
PAR = 7.5 dB, BW = 3.84 MHz
26
50
22
Gain
30
18
10
14
Efficiency
PARC @ .01% CCDF
-10
10
-30
6
2
-50
ACP
-2
-70
36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Single-carrier WCDMA Broadband
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 125 W,
3GPP WCDMA signal
35
Efficiency
25
Gain
15
0
IRL
-10
-20
PARC @ .01% CCDF
5
ACP
-5
1840
1900
1960
2020
Frequency (MHz)
-30
-40
2080
Data Sheet
6 of 14
Rev. 05.2, 2016-06-14