PTFB193404F_16 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

PTFB193404F
Thermally-Enhanced High Power RF LDMOS FETs
340 W, 30 V, 1930 – 1990 MHz
Description
The PTFB193404F is a 340‑watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 1930 to 1990
MHz frequency band. Features include input and output matching, high
gain and thermally-enhanced package with earless flange. Manufactured
with Infineon’s advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFB193404F
Package H-37275-6/2
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
36
40
35
Efficiency
30
25
IMD Low
20
ACPR ¹⁵
10
IMD Up
5
38 40 42 44 46 48 50
Average Output Power (dBm)
0
52
Features
• Broadband internal matching
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
1990 MHz, 30 V
- Output power = 100 W
- Efficiency = 33%
- Gain = 19 dB
- PAR = 7.5 dB @ 0.01% CCDF
- ACPR @ 5 MHz = –35 dBc
• Increased negative gate-source voltage range
for improved performance in Doherty amplifiers
• Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 80 W average, ƒ = 1990 MHz,
3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10.0 dB @ 0.01% CCDF 
 
Characteristic
Symbol Min
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
η_D
ACPR
17.5
29
—
Typ
19
33
–34.5
Max
—
—
–32.5
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 05.2, 2016-06-14