PTFB193404F_16 Datasheet, PDF (4/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

PTFB193404F
Typical Performance (cont.)
Two-tone Broadband Performance
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 52 dBm
60
0
50
40
Efficiency
30
Return Loss
-10
-20
IMD3
-30
20
Gain
10
1840
1900
1960
2020
Frequency (MHz)
-40
-50
2080
Two-tone Drive-up
V_DD = 30 V, I_DQ = 2.6 A,,
ƒ₁ = 1989 MHz, ƒ₂ = 1990 MHz
45
-25
40
35
-35
30
3rd Order IMD
-45
25
Efficiency ₂₀
15
-55
10
5
-65
0
39
44
49
54
Output Power, PEP. (dBm)
Two-tone Drive-up
V_DD = 30 V, I_DQ = 2.6 A,
ƒ₁ = 1989 MHz, ƒ₂ = 1990 MHz
20
42
19 _Gain
35
18
28
17
21
Efficiency
16
14
15
40
44
48
52
Output Power, PEP (dBm)
7
56
Two-tone Drive-up (over temperature)
(P_OUT-max 3rd order IMD @ –30 dBc)
V_DD = 30 V, I_DQ = 2.6 A,
ƒ₁ = 1959 MHz, ƒ₂ = 1960 MHz
21
50
Gain
20
40
19
30
18
20
Efficiency
17
+25C
+85C
10
–30C
16
0
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Data Sheet
4 of 14
Rev. 05.2, 2016-06-14