PTFB193404F_16 Datasheet, PDF (7/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

Broadband Circuit Impedance (measurements taken on full part, both sides)
Frequency
MHz
1900
1930
1960
1990
2020
Z Source Ω
R
jX
1.21
–3.60
1.21
–3.53
1.20
–3.47
1.20
–3.41
1.19
–3.35
Z Load Ω
R
jX
0.73
–2.08
0.72
–2.01
0.72
–1.94
0.72
–1.87
0.72
–1.81
See next page for circuit information
PTFB193404F
Data Sheet
7 of 14
Rev. 05.2, 2016-06-14