PTFB193404F_16 Datasheet, PDF (5/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

Typical Performance (cont.)
Two-tone Drive-up
at Selected Frequencies
V_DD = 30 V, I_DQ = 2.6 A, tone spacing = 1 MHz
-20
-30
-40
-50
1990 MHz
-60
1960 MHz
1930 MHz
-70
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Intermodulation Distortion
vs. Tone Spacing
V_DD = 30 V, I_DQ = 2.6 A,
ƒ = 1930 MHz, P_OUT = 317 W (PEP)
-10
-20
IMD3
-30
IMD5
-40
-50 ^IMD7
-60
-70
1
IMD Lower
IMD Upper
10
100
Two Tone Spacing (MHz)
PTFB193404F
Intermodulation Distortion
vs. Output Power
V_DD = 30 V, I_DQ = 2.6 A,
ƒ₁ = 1989 MHz, ƒ₂ = 1990 MHz
-15
3rd Order
-25
-35
5th
-45
7th
-55
-65
-75
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH,
43% clipping, PAR = 7.5 dB, 3.84 MHz BW
-20
-30
-40
-50
-60
36
ACPR Up
38 40 42
40
Efficiency
35
30
25
20
15
10
ACPR Low ₅
0
44 46 48 50 52
Average Output Power (dBm)
Data Sheet
5 of 14
Rev. 05.2, 2016-06-14