PTFB193404F_16 Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

PTFB193404F
RF Characteristics (cont.)
Two-carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 80 W average, ƒ₁ = 1980 MHz, ƒ₂ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8.0 dB @ 0.01% CCDF 
 
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
—
19
—
dB
η_D
—
29
—
%
IMD
—
–33
—
dBc
Two-tone Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 265 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
η_D
IMD
—
19
—
36
—
30
Max
—
—
—
Unit
dB
%
dBc
DC Characteristics (both sides)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current

On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 2.6 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_θJC
65
–6 to +10
200
–40 to +150
0.2
Unit
V
V
°C
°C
°C/W
Data Sheet
2 of 14
Rev. 05.2, 2016-06-14