PTFB193404F_16 Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

PTFB193404F
Ordering Information
Type and Version
Order Code
PTFB193404F V1 R0 PTFB193404FV1R0XTMA1
PTFB193404F V1 R250 PTFB193404FV1R250XTMA1
Package Description
H-37275-6/2, earless flange
H-37275-6/2, earless flange
Typical Performance (data taken in production test fixture)
Shipping
Tape & reel, 50 pcs
Tape & reel, 250 pcs
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6 A,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-25
-30
IM3 Low
IM3 Up
-35
-40
-45
-50
1990
1960
-55
1930
-60
36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
20
40
35
19 ^Gain
30
25
18
Efficiency ²⁰
15
17
10
5
16
36
38 40 42 44 46 48 50
Average Output Power (dBm)
0
52
Data Sheet
3 of 14
Rev. 05.2, 2016-06-14