PTFB193404F_16 Datasheet, PDF (12/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz

Pinout Diagram
Package H-37275-6/2 
PTFB193404F
Pin
Description
V1
V_DD device 1
V2
V_DD device 2
D1
Drain device 1
D2
Drain device 2
G1
Gate device 1
G2
Gate device 2
S
Source (flange)
See next page for package outline specifications
Data Sheet
12 of 14
Rev. 05.2, 2016-06-14