HYS64T32000GDL Datasheet, PDF (8/48 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Module

HYS64T[32000/64020/128021][G/H]DL–[3.7/5]–A
512 Mbit DDR2 SDRAM
Overview
Table 4 Components on Modules¹⁾
Product Type
HYS64T32000GDL
HYS64T64020GDL
HYS64T32000HDL²⁾
HYS64T64020HDL²⁾
HYS64T128021GDL
HYS64T128021HDL²⁾
DRAM Components
HYB18T512160AC
HYB18T512160AF²⁾
HYB18T512800AC
HYB18T512800AF²⁾
DRAM Density
512 Mbit
512 Mbit
512 Mbit
512 Mbit
DRAM Organisation
32M ×16
32M ×16
64M ×8
64M ×8
1) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet.
2) Green Product
1.3
Pin Configuration
The pin configuration of the Small Outline DDR2 SDRAM DIMM is listed by function in Table 5 (200 pins). The
abbreviations used in columns Pin and Buffer Type are explained in Table 6 and Table 7 respectively. The pin
numbering is depicted in Figure 1
Table 5 Pin Configuration of SO-DIMM
Pin#
Name Pin Buffer Function
Type Type
Clock Signals
30
CK0 I
SSTL Clock Signals 2:0
164
CK1 I
SSTL
32
CK0 I
SSTL Complement Clock Signals 2:0
166
CK1 I
SSTL
79
CKE0 I
SSTL Clock Enable Rank 0
80
CKE1 I
SSTL Clock Enable Rank 1
Note: 2-rank module
NC
NC —
Note: 1-rank module
Control Signals
110
S0
I
SSTL Chip Select Rank 0
115
S1
I
SSTL Chip Select Rank 1
Note: 2-rank module
NC
NC —
Note: 1-rank module
108
RAS I
SSTL Row Address Strobe
113
CAS I
SSTL Column Address Strobe
109
WE I
SSTL Write Enable
Address Signals
107
BA0 I
SSTL Bank Address Bus 1:0
106
BA1 I
SSTL
102
A0
I
SSTL Address Bus 4:0
101
A1
I
SSTL
100
A2
I
SSTL
99
A3
I
SSTL
98
A4
I
SSTL
Data Sheet
8
Rev. 0.91, 2004-06
09122003-FTXN-KM26