HYS64T32000GDL Datasheet, PDF (28/48 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Module

HYS64T[32000/64020/128021][G/H]DL–[3.7/5]–A
512 Mbit DDR2 SDRAM
SPD Codes
Table 19 SPD Codes for HYS 64T[32000/64020] PC2–4200S
Product Type
Organization
512 MB
×64
2 Ranks (×16)
Label Code
PC2–4200S–444
JEDEC SPD Revision
Rev. 1.1
Byte# Description
HEX
36
t_WR.min [ns]
3C
37
t_WTR.min [ns]
1E
38
t_RTP.min [ns]
1E
39
Analysis
00
Characteristics
40
t_RC and t_RFC Extension 00
41
t_RC.min [ns]
3C
42
t_RFC.min [ns]
69
43
t_CK.max [ns]
80
44
t_DQSQ.max [ns]
1E
45
t_QHS.max [ns]
28
46
PLL Relock Time
00
47
T_CASE.max Delta /
53
∆T_4R4W Delta
48
Psi(T-A) DRAM
72
49
∆T₀ (DT0)
52
50
∆T_2N (DT2N, UDIMM) 2B
or ∆T_{2Q (} (DT2Q,
RDIMM)
51
∆T_2P (DT2P)
1D
52
∆T_3N (DT3N)
1D
53
∆T_3P.fast (DT3P fast) 23
54
∆T_3P.slow (DT3P slow) 16
55
∆T_4R (DT4R) / ∆T_4R4W 36
S ^{Sign (DT4R4W)}
56
∆T_5B (DT5B)
1C
57
∆T₇ (DT7)
30
58
Psi(ca) PLL
00
59
Psi(ca) REG
00
512 MB
×64
2 Ranks (×16)
PC2–4200S–444
Rev. 1.1
HEX
3C
1E
1E
00
00
3C
69
80
1E
28
00
53
72
52
2B
1D
1D
23
16
36
1C
30
00
00
256 MB
×64
1 Rank (×16)
PC2–4200S–444
Rev. 1.1
HEX
3C
1E
1E
00
00
3C
69
80
1E
28
00
53
72
52
2B
1D
1D
23
16
36
1C
30
00
00
256 MB
×64
1 Rank (×16)
PC2–4200S–444
Rev. 1.1
HEX
3C
1E
1E
00
00
3C
69
80
1E
28
00
53
72
52
2B
1D
1D
23
16
36
1C
30
00
00
Data Sheet
28
Rev. 0.91, 2004-06
09122003-FTXN-KM26