HYS64T32000GDL Datasheet, PDF (24/48 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Module

HYS64T[32000/64020/128021][G/H]DL–[3.7/5]–A
512 Mbit DDR2 SDRAM
Electrical Characteristics & AC Timings
Table 17 AC Timing - Absolute Specificatioins –5/–3.7
Parameter
Symbol –3.7
PC2-4200S
Min.
Max.
Active to Active/Auto-refresh
t_RC
60
—
command period
Auto-refresh to Active/Auto-refresh t_RFC
105
—
command period
Active to Read or Write delay (with t_RCD
15
—
and without Auto-Precharge) delay
Precharge command period
t_RP
15
—
Active bank A to Active bank B
t_RRD
10
—
command
CAS A to CAS B Command Period t_CCD
Write recovery time
t_WR
Auto precharge write recovery +
t_DAL
precharge time
2
—
15
—
WR + t_RP —
Internal write to read command delay t_WTR
7.5
—
Internal read to precharge command t_RTP
7.5
—
delay
Exit power down to any valid
t_XARD
2
—
command
(other than NOP or Deselect)
Exit active power-down mode to read t_XARDS 6 − AL
—
command (slew exit, lower power)
Exit precharge power-down to any t_XP
2
—
valid command (other than NOP or
Deselect)
Exit Self-Refresh to read command t_XSRD 200
—
Exit Self-Refresh to non-read
command
t_XSNR
t_RFC + 10
—
CKE minimum high and low pulse t_CKE
3
—
width
OCD drive mode output delay
t_OIT
Minimum time clocks remain ON
t_DELAY
after CKE asynchronously drops low
0
12
t_IS + t_CK + t_IH —
Average Periodic Refresh Interval t_REFI
—
7.8
—
3.9
1) For details and notes see the relevant INFINEON component datasheet
2) CL = 3
3) CL = 4 & 5
4) 0 °C ≤ T_CASE ≤ 85 °C
5) 85 °C < T_CASE ≤ 95 °C
–5
PC2-3200S
Min.
Max.
55
—
105
—
15
—
15
—
10
—
2
—
15
—
WR + t_RP —
10
—
7.5
—
2
—
6 − AL
—
2
—
200
—
t_RFC + 10 —
3
—
0
12
t_IS + t_CK+ t_IH —
—
7.8
—
3.9
Unit Notes
ns ¹⁾
ns ¹⁾
ns ¹⁾
ns ¹⁾
ns ¹⁾
t_CK ¹⁾
ns ¹⁾
t_CK ¹⁾
ns ¹⁾
ns ¹⁾
t_CK ¹⁾
t_CK ¹⁾
t_CK ¹⁾
t_CK ¹⁾
ns ¹⁾
t_CK ¹⁾
ns ¹⁾
ns ¹⁾
µs ¹⁾⁴⁾
1)5)
Data Sheet
24
Rev. 0.91, 2004-06
09122003-FTXN-KM26