BFP840ESD Datasheet, PDF (8/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

2
Features
BFP840ESD
Features
• Robust very low noise amplifier based on Infineon´s reliable
high volume SiGe:C technology
• Unique combination of high end RF performance and robustness:
20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
• Very high transition frequency f_T = 80 GHz enables very low
noise figure at high frequencies:
NF_min = 0.85 dB at 5.5 GHz, 1.8 V, 6 mA
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4
2
1
• High gain |S₂₁|² = 18.5 dB at 5.5 GHz, 1.8 V, 10 mA
• OIP3 = 23 dBm at 5.5 GHz, 1.5 V, 6 mA
• Ideal for low voltage applications e.g. V_CC = 1.2 V and 1.8 V
(2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
SOT343
• Low power consumption, ideal for mobile applications
• Easy to use Pb free (RoHS compliant) and halogen free
industry standard package with visible leads
• Qualification report according to AEC-Q101 available
Applications
As Low Noise Amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB
• Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass)
and C-band LNB (1st and 2nd stage LNA)
• Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer)
• Ka-band oscillators (DROs)
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP840ESD
Package
SOT343
1=B
Pin Configuration
2=E
3=C
4=E
Marking
T8s
Data Sheet
8
Revision 1.2, 2013-03-28