BFP840ESD Datasheet, PDF (12/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP840ESD
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, T_A = 25 °C
Electrical Characteristics
Top View
E
C
VC
Bias -T
OUT
VB
B
E
Bias-T
(Pin 1)
IN
Figure 5-1 BFP840ESD Testing Circuit
Table 5-3 AC Characteristics, V_CE = 1.8 V, f = 0.45 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
33.5 –
27.5 –
0.6 –
26.5 –
4
–
19.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 10 mA
I_C = 10 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 10 mA
I_C = 10 mA
Data Sheet
12
Revision 1.2, 2013-03-28