BFP840ESD Datasheet, PDF (19/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

5.5
Characteristic AC Diagrams
BFP840ESD
Electrical Characteristics
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75
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55
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30
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10
5
0
0
5
10 15 20 25 30
I_C [mA]
Figure 5-7 Transition Frequency f_T = f (I_C), f = 2 GHz, V_CE = Parameter
2.00V
1.80V
1.50V
1.00V
0.50V
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26
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1.5V, 2400MHz
12
1.8V, 2400MHz
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1.5V, 5500MHz
8
1.8V, 5500MHz
6
4
2
0
0
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30
I_C [mA]
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (I_C), Z_S = Z_L = 50 Ω, V_CE, f = Parameters
Data Sheet
19
Revision 1.2, 2013-03-28