BFP840ESD Datasheet, PDF (21/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP840ESD
Electrical Characteristics
0.05
0.045
0.04
0.035
0.03
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V_CB [V]
Figure 5-11 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
40
35
30
G_ms
25
G_ma
20
15
|S₂₁|²
G_ms
10
5
0 1 2 3 4 5 6 7 8 9 10 11 12
f [GHz]
Figure 5-12 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 1.8 V, I_C = 10 mA
Data Sheet
21
Revision 1.2, 2013-03-28