BFP840ESD Datasheet, PDF (25/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP840ESD
Electrical Characteristics
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
f = 12GHz
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
5
10
15
20
I_C [mA]
Figure 5-19 Noise Figure NF_min = f (I_C), V_CE = 1.8 V, Z_S = Z_opt, f = Parameter in GHz
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
f = 12GHz
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
5
10
15
20
I_C [mA]
Figure 5-20 Noise Figure NF₅₀ = f (I_C), V_CE = 1.8 V, Z_S = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. T_A = 25 °C.
Data Sheet
25
Revision 1.2, 2013-03-28