BFP840ESD Datasheet, PDF (22/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP840ESD
Electrical Characteristics
39
36
0.45GHz
33
0.90GHz
30
1.50GHz
1.90GHz
27
2.40GHz
24
3.50GHz
21
5.50GHz
18
15
10.00GHz
12.00GHz
12
9
0 5 10 15 20 25 30 35 40 45
I_C [mA]
Figure 5-13 Maximum Power Gain G_max = f (I_C), V_CE = 1.8 V, f = Parameter in GHz
39
36
33
0.45GHz
30
0.90GHz
1.50GHz
27
1.90GHz
2.40GHz
24
3.50GHz
5.50GHz
21
18
10.00GHz
15
12.00GHz
12
9
0
0.5
1
1.5
2
2.5
3
V_CE [V]
Figure 5-14 Maximum Power Gain G_max = f (V_CE), I_C = 10 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.2, 2013-03-28