BFP840ESD Datasheet, PDF (7/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP840ESD
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Product Brief
Product Brief
The BFP840ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz
Wi-Fi applications. The device is based on Infineon´s reliable high volume SiGe:C technology.
The BFP840ESD provides inherently good input and output power match as well as inherently good noise match
at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input
leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the Wi-Fi
application. Integrated protection elements at in- and output make the device robust against ESD and excessive
RF input power.
The device offers its high performance at low current and voltage and is especially well-suited for portable battery-
powered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry
standard package with visible leads.
Data Sheet
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Revision 1.2, 2013-03-28