BFP840ESD Datasheet, PDF (20/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP840ESD
Electrical Characteristics
25 _{4 5 6 7 8}
9 _{10 11 12 13 14}
15 _{16 17}
18
20 ⁹ 10 _{11 12 13 14}
15 16 ₁₇
18
19 ₂₀
21
22
20
15 ^{15 16} 17
18
10
19
5
1
21
22
2₂⁰₁
22 ₂₃
21
1.2
1.4
202221 ₁₈
1.6
V_CE [V]
212092 ²¹
1.8
2
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm]= f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz
25 _{−6 −5 −4 −3 −2}
20 ^{−1 0} _{1 2}
1₂
4
5
6
34⁵
6
7
15
3
7
10 ₃
2
1
0
−1
5
1
4
3
2
1
−01
6
5
4
3
2
1
−01
5
4
1.2
1.4
1.6
1.8
2
V_CE [V]
Figure 5-10 Compression Point at output OP_1dB [dBm]= f (I_C, V_CE), Z_S = Z_L= 50 Ω, f = 5.5 GHz
Data Sheet
20
Revision 1.2, 2013-03-28