BFP840ESD Datasheet, PDF (11/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

5
Electrical Characteristics
BFP840ESD
Electrical Characteristics
5.1
DC Characteristics
Table 5-1 DC Characteristics at T_A = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V_(BR)CEO
Min.
2.25
Collector emitter leakage current
I_CES
–
Collector base leakage current
I_CBO
–
Emitter base leakage current
I_EBO
–
DC current gain
h_FE
150
5.2
General AC Characteristics
Values
Typ. Max.
2.6
–
400
–
400
–
10
260 450
Unit Note / Test Condition
V
I_C = 1 mA, I_B = 0
Open base
nA V_CE = 1.5 V, V_BE = 0
E-B short circuited
nA V_CB = 1.5 V, I_E = 0
Open emitter
μA V_EB = 0.5 V, I_C = 0
Open collector
V_CE = 1.8 V, I_C = 10 mA
Pulse measured
Table 5-2 General AC Characteristics at T_A = 25 °C
Parameter
Symbol
Min.
Transition frequency
f_T
–
Collector base capacitance
C_CB
–
Collector emitter capacitance
C_CE
–
Emitter base capacitance
C_EB
–
Values
Typ. Max.
80
–
37
–
0.40 –
0.41 –
Unit Note / Test Condition
GHz
fF
pF
pF
V_CE = 1.8 V, I_C = 25 mA
f = 2 GHz
V_CB = 1.8 V, V_BE = 0
f = 1 MHz
Emitter grounded
V_CE = 1.8 V, V_BE = 0
f = 1 MHz
Base grounded
V_EB = 0.4 V,V_CB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.2, 2013-03-28