BFP840ESD Datasheet, PDF (23/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP840ESD
Electrical Characteristics
1
1.5
0.5
12.0
2
12.0
0.4
11.0
10.0
11.0
10.0
0.3
9.0
9.0
0.2
0.1
8.0
7.0
8.0
7.0
6.0
0.03 to 12 GHz
0
0.1
0.2
0.3
6.0
0.4
0.5_5.0
1 1.5 2
3 45
0.03
3
4
5
10
0.03
−0.1
4.0
5.0
−0.2
−0.3
−0.4
3.0
4.0
2.0
2.0
3.0
−0.5
−1
1.0
2.0
−1.5
−10
−5
1.0
−4
1.0
−3
−2
5mA
10mA
15mA
Figure 5-15 Input Reflection Coefficient S₁₁ = f (f), V_CE = 1.8 V, I_C = 5 / 10 / 15 mA
0.5
0.4
0.3
0.2
0.1
0
0.1 0.2 0.3 0.4 0.5
−0.1
8.0
−0.2
−0.3
−0.4
−0.5
1
1.5
2
3.5
5.5
3.5 _2.4
5.5
1 1.5 2
3.5 _0.5 0.5
5.5
2.4
1.9
1.5
3 ^0.4⁹ 5
0.5
8.0
10.0
10.0
12.0
12.0
−2
−1.5
−1
3
4
5
10
−10
−5
−4
−3
5mA
10mA
15mA
Figure 5-16 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 1.8 V, I_C = 5 / 10 / 15 mA
Data Sheet
23
Revision 1.2, 2013-03-28