BFP640_15 Datasheet, PDF (8/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

2
Features
• Linear low noise amplifier based on Infineon´s reliable,
high volume SiGe:C technology
• High linearity OIP3 = 27.5 dBm @ 5.5 GHz, 3 V, 25 mA
• High transition frequency f_T = 42 GHz @ 3 V, 30 mA
• NF_min = 0.85 dB @ 3.5 GHz, 3 V, 6 mA
• Maximum power gain Gma = 18 dB @ 3.5 GHz, 3 V, 25 mA
• Low power consumption, ideal for mobile applications
• Very common as GPS low noise amplifier, see respective
application notes on Infineon internet page
• Easy to use Pb-free (RoHS compliant) and halogen-free
standard package with visible leads
• Qualification report according to AEC-Q101 available
BFP640
Features
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4
2
1
Applications
As Low Noise Amplifier (LNA) in
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB,
Bluetooth
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP640
Package
SOT343
1=B
Pin Configuration
2=E
3=C
4=E
Marking
R4s
Data Sheet
8
Revision 2.0, 2015-03-13