BFP640_15 Datasheet, PDF (14/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640
Electrical Characteristics
Table 5-6 AC Characteristics, V_CE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
Values
Typ. Max.
24
–
21.5 –
0.65 –
19.5 –
12.5 –
26.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 25 mA
I_C = 25 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Table 5-7 AC Characteristics, V_CE = 3 V, f = 2.4 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
Values
Typ. Max.
22
–
19.5 –
0.7 –
18
–
12
–
27.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 25 mA
I_C = 25 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Table 5-8 AC Characteristics, V_CE = 3 V, f = 3.5 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ma
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
Values
Typ. Max.
18
–
16.5 –
0.85 –
15
–
12
–
27.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 25 mA
I_C = 25 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Data Sheet
14
Revision 2.0, 2015-03-13