BFP640_15 Datasheet, PDF (20/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640
Electrical Characteristics
30
25
28
20
15
27
25
26
10
24
5 ¹⁶
1189
20
21
22
23
19
24
20 ²¹
25
22 ²³
19
1
1.5
2
2.5
3
3.5
4
V_CE [V]
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 2.4 GHz
30
13
25
12
11
20
10
11
10
9
9
15
8
8
6
7
7
5
6
6
10 4
3
2
−011
5
1
1.5
5
4
3
2
−011
2
2.5
5
4
3
3
2 _−011
2
3
3.5
4
V_CE [V]
Figure 5-10 Compression Point at output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 2.4 GHz
Data Sheet
20
Revision 2.0, 2015-03-13