BFP640_15 Datasheet, PDF (13/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640
Electrical Characteristics
Table 5-3 AC Characteristics, V_CE = 3 V, f = 0.45 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
33
–
31.5 –
0.55 –
26
–
10.5 –
23.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 25 mA
I_C = 25 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Table 5-4 AC Characteristics, V_CE = 3 V, f = 0.9 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
Values
Typ. Max.
29
–
27.5 –
0.6 –
24
–
12
–
25.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 25 mA
I_C = 25 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Table 5-5 AC Characteristics, V_CE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
Values
Typ. Max.
25.5 –
23.5 –
0.6 –
21
–
11.5 –
25.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 25 mA
I_C = 25 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Data Sheet
13
Revision 2.0, 2015-03-13