BFP640_15 Datasheet, PDF (22/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640
Electrical Characteristics
45
40
0.15GHz
35
0.45GHz
30
0.90GHz
25
1.50GHz
1.90GHz
20
2.40GHz
3.50GHz
15
5.50GHz
10
10.00GHz
5
0
0
10
20
30
40
50
60
I_C [mA]
Figure 5-13 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz
40
0.15GHz
35
0.45GHz
30
0.90GHz
25
1.50GHz
1.90GHz
2.40GHz
20
3.50GHz
15
5.50GHz
10
10.00GHz
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_CE [V]
Figure 5-14 Maximum Power Gain G_max = f (V_CE), I_C = 25 mA, f = Parameter in GHz
Data Sheet
22
Revision 2.0, 2015-03-13