BFP640_15 Datasheet, PDF (25/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640
Electrical Characteristics
3
f = 10GHz
f = 5.5GHz
2.5
f = 3.5GHz
f = 2.4GHz
2
1.5
1
f = 1.9GHz
f = 1.5GHz
0.5
f = 0.9GHz
f = 0.45GHz
0
0 5 10 15 20 25 30 35 40 45
I_C [mA]
Figure 5-19 Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz
3.5
3
f = 10GHz
f = 5.5GHz
2.5
f = 3.5GHz
f = 2.4GHz
2
1.5
1
f = 1.9GHz
f = 1.5GHz
0.5
f = 0.9GHz
f = 0.45GHz
0
0 5 10 15 20 25 30 35 40 45
I_C [mA]
Figure 5-20 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves.
Data Sheet
25
Revision 2.0, 2015-03-13