BFP640_15 Datasheet, PDF (21/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640
Electrical Characteristics
0.2
0.16
0.12
0.08
0.04
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CB [V]
Figure 5-11 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
40
35
30
G_ms
25
20
15
G_ma
|S₂₁|²
10
5
0
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Figure 5-12 Gain G_ma,G_ms, |S₂₁|² = f (f), V_CE = 3 V, I_C = 25 mA
Data Sheet
21
Revision 2.0, 2015-03-13