|
BFP640_15 Datasheet, PDF (15/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor | |||
|
◁ |
BFP640
Electrical Characteristics
Table 5-9 AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
Gma
â
|S21|2
â
NFmin
â
Gass
â
OP1dB
â
OIP3 â
Values
Typ. Max.
14
â
12.5 â
1.1 â
12
â
12.5 â
27.5 â
Unit Note / Test Condition
dB
dB
dBm
IC = 25 mA
IC = 25 mA
IC = 6 mA
IC = 6 mA
ZS = ZL = 50 â¦
IC = 25 mA
IC = 25 mA
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 ⦠from 0.2 MHz to 12 GHz.
Data Sheet
15
Revision 2.0, 2015-03-13
|
▷ |