BFP640_15 Datasheet, PDF (7/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP640
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Product Brief
Product Brief
The BFP640 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to V_CE = 4.1 V and currents up to I_C = 50 mA. With its high linearity at currents as low as 10
mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately
40 GHz, hence the device offers high power gain at frequencies up to 8 GHz in amplifier applications. The device
is housed in an easy to use plastic package with visible leads.
Data Sheet
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Revision 2.0, 2015-03-13