BFP640_15 Datasheet, PDF (16/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

5.4
Characteristic DC Diagrams
BFP640
Electrical Characteristics
30
160µA
140µA
25
120µA
20
100µA
80µA
15
60µA
10
40µA
20µA
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_CE [V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter in µA
10³
10²
10⁰
10¹
I_c [mA]
Figure 5-3 DC Current Gain h_FE = f (I_C), V_CE = 3 V
Data Sheet
16
10²
Revision 2.0, 2015-03-13