BFP640ESD Datasheet, PDF (8/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP640ESD
Product Brief
2
Product Brief
The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor
(HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection
circuits, which enhance robustness against ESD and high RF input power strongly. The device combines
robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of
wireless applications.
The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power
consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Table 1 Quick Reference DC Characteristics at T_A = 25°C
Parameter
Symbol
Values
Min. Typ. Max.
Collector emitter breakdown voltage V_(BR)CEO 4.1
4.7
–
Collector base leakage current
I_CBO
–
–
500
DC current gain
Collector current
Total power dissipation
h_FE
110 180 270
I_C
–
–
50
P_tot
–
–
200
Unit Note / Test Condition
V
I_C = 1 mA, I_B = 0
nA V_CB = 2 V, I_E = 0
Open emitter
V_CE = 3 V, I_C = 30 mA
mA
mW T_S ≤ 88 °C
Data Sheet
8
Revision 1.0, 2010-06-29